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3 edition of Gallium arsenide and related compounds, 1982 found in the catalog.

Gallium arsenide and related compounds, 1982

contributed papers from the Tenth International Symposium on Gallium Arsenide and Related Compounds held at Albuquerque, New Mexico, USA, 19-22 September 1982

by International Symposium on Gallium Arsenide and Related Compounds (10th 1982 Albuquerque, N.M.)

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Published by Institute of Physics in Bristol .
Written in English

    Subjects:
  • Gallium arsenide -- Congresses.,
  • Semiconductors -- Congresses.

  • Edition Notes

    Includes bibliographical references.

    Statementedited by G. E. Stillman.
    SeriesConference series - Institute of Physics -- no. 65., Conference series (Institute of Physics (Great Britain)) -- no. 65.
    ContributionsStillman, G. E.
    The Physical Object
    Paginationxvii, 650 p. :
    Number of Pages650
    ID Numbers
    Open LibraryOL17905635M
    ISBN 10085498156X

    Gallium arsenide is an intermetallic compound that is recognized as a potential toxicological risk to workers occupationally exposed to its dust /in semi-conductor industries/. The chemistry of gallium arsenide in the body plays a key role in defining its toxicity. GaAs is found to be soluble in aqueous solution and forms unidentified gallium and arsenic species upon Author: Nidhi Dwivedi.

    Gallium arsenide (GaAs) is a compound of the elements gallium and is a III-V direct band gap semiconductor with a zinc blende crystal structure.. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical al formula: GaAs. Conference: Tenth International Symposium on Gallium Arsenide and Related Compounds, At Albuquerque, New Mexico, USA, Volume: Gallium Arsenide and Related Compounds, , The Institute of Physics.

    gallium nitride, GaN, gallium arsenide, GaAs, and indium gallium arsenide phosphide, InGaAsP—that have valuable semiconductor and optoelectronic properties. Some of these compounds are used in solid-state devices such as transistors and rectifiers, and some form the basis for light-emitting diodes and semiconductor lasers. T.Y. Tan, in Encyclopedia of Materials: Science and Technology, 4 Diffusion in Other III–V Compounds. Gallium arsenide is certainly the one III–V compound in which self- and impurity-diffusion processes have been studied most extensively. The available results on self-diffusion in III–V compounds have been summarized by Willoughby ().The group III and the group V diffusivities.


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Gallium arsenide and related compounds, 1982 by International Symposium on Gallium Arsenide and Related Compounds (10th 1982 Albuquerque, N.M.) Download PDF EPUB FB2

International Symposium on Gallium Arsenide and Related Compounds (10th: Albuquerque). Gallium arsenide and related compounds Bristol: Institute of Physics, © (OCoLC) Material Type: Conference publication: Document Type: Book: All Authors / Contributors: G E Stillman.

Progress in the study of gallium arsenide and related compounds is reported. The subjects discussed include bulk and epitaxial crystal growth, optoelectronic devices, microwave devices, ion implantation, and characterization.

Improvements in the preparation of high purity undoped semiinsulating GaAs are reported, and the EL2 electron trap in this material is discussed. For gallium arsenide (GaAs) and related compounds, the MOVPE and MBE techniques are in widespread use.

MOVPE is also important for the growth of wide-band gap semiconductors such as gallium nitride (GaN) and silicon carbide (SIC), whereas molecular beam epitaxy (MBE) is more important for silicon-germanium (SGe).

Gallium compounds This is a Wikipedia book, a collection of Wikipedia articles that can be easily saved, imported by an external electronic rendering service, and ordered as a printed book.

Edit this book: Book Creator Wikitext. Gallium arsenide has a similar crystal structure to silicon, but each atom of gallium has an arsenic atom nearest neighbor and vice versa. These materials are the core, along with the compound indium phosphide and its derived compounds (which are mostly used in telecommunications), of semiconductor lasers, which are also sometimes called.

Gallium arsenide and related compounds, invited and contributed papers from the Eight International Symposium on Gallium Arsenide and Related Compounds held at the Technical University of Vienna, September / edited by H.

Thim Institute of Physics Bristol, [England] Australian/Harvard Citation. Gallium arsenide (GaAs) is one of the most useful of the III–V semiconductors. In this chapter, the properties of GaAs are described and the ways in which these are exploited in devices are explained.

The limitations of this material are presented in terms of both its physical and its electronic properties. Book Review: Gallium arsenide and related compounds Proceedings 13th International Symposium on Gallium Arsenide and Related Compounds Las Vegas, Nevada, USA, Sept.

Oct. 1,ed., W.T. Lindley, Institute of Physics Conference Series No. 83 (Adam Hilger, Bristol, ) pp. xvi +£, ISBN References: Goldberg Yu.A. Handbook Series on Semiconductor Parameters, vol.2, M. Levinshtein, S. Rumyantsev and M. Shur, ed., World Scientific, London,pp.

Book Description. Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds focuses on device applications for Gallium Arsenide and related compounds.

A topic of importance discussed is the first GaAs supercomputer from Fujitsu. Gallium Arsenide and Related Compounds emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys.

The book is a valuable reference for. Growth of Gallium Arsenide (GaAs) Growth of Aluminum Gallium Arsenide (AlGaAs) Growth of Indium‐Based Alloys.

Growth of Antimony‐Based Alloys. Growth of Group III Nitrides. Metalorganic Dopant Sources for III‐V Alloys. Hydrogen Passivation of Intentional Dopants. Selective Area Epitaxy. Photo‐Assisted Growth of III‐V Materials. References. Provides an in-depth introduction to the growth, characterization, and device technology of the GaInAsP conductor, the cornerstone of the optical fibre telecommunications industry.

Includes a comprehensive treatment of all known crystal growth methods. Relates particular physical properties of materials systems to the performance of semiconductor devices.

References: Goldberg Yu.A. and N.M. Schmidt Handbook Series on Semiconductor Parameters, vol.2, M. Levinshtein, S. Rumyantsev and M. Shur, ed., World Scientific.

The pressure dependence of the effective masses in gallium arsenide and related compounds: Authors: Tatham, Harry L. Affiliation: AA(University of Surrey (United Kingdom)) Publication: ProQuest Dissertations And Theses; Thesis (Ph.D.)--University of Surrey (United Kingdom).

Gallium arsenide and related compounds, papers from the Fifth International Symposium on Gallium Arsenide and related compounds held in Deauvile, September London: Institute of Physics.

MLA Citation. Institute of Physics (Great Britain)). and Societé française électriciens. and Societé française de physique, Paris.

Monolithic microwave integrated circuit ( words) exact match in snippet view article find links to article devices such as cellular phones. MMICs were originally fabricated using gallium arsenide (GaAs), a III-V compound semiconductor. It has two fundamental advantages.

Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu.

The book. Gallium arsenide and related compounds, contributed papers from the ninth International Symposium on Gallium Arsenide and Related Compounds held. Book Review. Fujimoto (Editor).

Gallium arsenide and related compounds Institute of Physics Conference Series 79 Proceedings of the Twelfth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 23–26 September Adam Hilger Ltd.

Bristol and BostonSeiten, zahlreiche Abbildungen und. Two compounds evaluated in this volume of the IARC Monographs, gallium arsenide and indium phosphide, are predominantly used in the semiconductor industry. However, only parts of the workforce in this industry are exposed to these compounds, and there is also potential for exposure to several other carcinogens in this industry.

As none of the studies of cancer in the semiconductor industry.The subject of the workshop was the Gallium Arsenide and related compounds devices for Physics research and applications.

The topics were the GaAs detectors for the experimental apparatus, the characterisation of the materials and the detectors, the GaAs electronics and optoelectronics, the radiation hardness and the x-ray detectors for x-ray imaging in medical applications.Gallium Arsenide and Related Compound Hardcover – January 1, by Lester F Eastman (Author) See all formats and editions Hide other formats and editions.

Price New from Used from Hardcover "Please retry" $ — $ Author: Lester F Eastman.